Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition
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Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition Enlace externoen Biblioteca Virtual del Banco de la República
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- Título: Correlation between optical, morphological and compositional properties of Aluminum Nitride thin films by Pulsed Laser Deposition
- Autor: Pérez Taborda, Jaime Andrés; Vera Londoño, Liliana; Riascos, Henry
- Publicación original: IEEE Sensors Journal; Vol. 16, No. 2, 2016
- Descripción física: PDF
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Nota general:
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AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles.
Experimental data showed that the root-mean-square roughness was in the range of 0.3 nm. X-ray photoelectron spectroscopy (XPS) was employed to characterize the chemical.
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AlN thin films were grown in a N2 atmosphere onto a Si/Si3N4 substrate by pulsed laser ablation. We have varied the substrate temperature for the thin film growth, using X-ray Reflectometry (XRR) analysis, we have characterized the thickness and density of the thin layer and the interface roughness from the X-ray reflectivity profiles.
- Notas de reproducción original: Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)
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Notas:
- Resumen: Pulsed laser deposition; Aluminium nitride; Sensors acustic wave
- © Derechos reservados del autor
- Colfuturo
- Forma/género: texto
- Idioma: inglés
- Institución origen: Biblioteca Virtual del Banco de la República
- Encabezamiento de materia:
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