Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

Autor: Pérez Taborda, Jaime Andrés; Romero, Juan José; Muñoz Rojo, Miguel; Briones, Fernando; Maíz, Jon; Gonzaleza, Marisol Martin

Título: Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

Publicación original: Nanotechnology 27, 2016

Descripción física: PDF

Notas de reproducción original: Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)

Notas:

  • Resumen: Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according to previously reported values on films—with a relatively large power factor (? centerdot S 2= 16 ?W centerdot m? 1 centerdot K? 2). More importantly, a reduction in the thermal conductivity at room temperature (?= 1.13±0.12 W.
  • Resumen: Silicio germanio; Termoelectricos; Plasma
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Idioma: inglés