Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering

• Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering Enlace externo
  en Biblioteca Virtual del Banco de la República

Registro bibliográfico

• Título: Low thermal conductivity and improved thermoelectric performance of nanocrystalline silicon germanium films by sputtering
• Autor: Pérez Taborda, Jaime Andrés; Romero, Juan José; Muñoz Rojo, Miguel; Briones, Fernando; Maíz, Jon; Gonzaleza, Marisol Martin
• Publicación original: Nanotechnology 27, 2016
• Descripción física: PDF
• Notas de reproducción original: Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)
• Notas:
  • Resumen: Si x Ge 1? x alloys are well-known thermoelectric materials with a high figure of merit at high temperatures. In this work, metal-induced crystallization (MIC) has been used to grow Si 0.8 Ge 0.2 films that present improved thermoelectric performance (zT= 5.6× 10? 4 at room temperature)—according to previously reported values on films—with a relatively large power factor (? centerdot S 2= 16 ?W centerdot m? 1 centerdot K? 2). More importantly, a reduction in the thermal conductivity at room temperature (?= 1.13±0.12 W.
  • Resumen: Silicio germanio; Termoelectricos; Plasma
  • © Derechos reservados del autor
  • Colfuturo
• Forma/género: texto
• Idioma: inglés
• Institución origen: Biblioteca Virtual del Banco de la República
• Encabezamiento de materia:
  • Ciencias naturales y matemáticas; Ciencias naturales y matemáticas / Física