InAs self-assembled quantum dot molecules: tailoring growth and optical properties = Moléculas artificiales auto-ensambladas con InAs: ingeniería de crecimiento y propiedades ópticas

• InAs self-assembled quantum dot molecules: tailoring growth and optical properties = Moléculas artificiales auto-ensambladas con InAs: ingeniería de crecimiento y propiedades ópticas Enlace externo en Biblioteca Virtual del Banco de la República

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• Título: InAs self-assembled quantum dot molecules: tailoring growth and optical properties = Moléculas artificiales auto-ensambladas con InAs: ingeniería de crecimiento y propiedades ópticas
• Autor: Rojas Rojas, Hector Jonathan
• Publicación original: 2019
• Descripción física: PDF
• Nota general:
  • Colombia
• Notas de reproducción original: Digitalización realizada por la Biblioteca Virtual del Banco de la República (Colombia)
• Notas:
  • Resumen: Abstract: Self-assembled semiconductor quantum dots (QDs) have been widely investigated as a quantum-hardware candidate which utilize the spin of a charged carrier to embody a solid-state qubit. Due to the large dipole moment of confined optical states, they are the ideal interface to encode information as flying qubits. However, the coherence time is limited by the spin coupling with the environment. A system which promises significantly longer coherence consists of logic singlet-triplet qubits formed in vertically stacked pairs of QDs, so-called quantum dot molecules (QDM). Here, a specific “sweet spot” in the applied gate voltage can be realized in which the singlet-triplet energy splitting is in first-order independent to electric and magnetic field fluctuations. Nevertheless, complications regarding non-deterministic growth and electric control are the main problem to access the sweet spot. With this master’s project, we aim to pave the path towards the growth and fabrication of an innovative QDM charge storage device which enables optical initialization of valence-band holes. We approach to control holes due to their weak hyperfine interaction. To tackle the complexity of quantum states in QDM, we developed a theoretical framework to understand the relevant physical interactions. This was employed to simulate quantum states and fit growth parameters. Dot size homogeneity and low QD density were achieved by modulation of temperature and deposition rates during growth. Moreover, Indium-flush growth technique was used to tailor dot height, hence its confinement energy. Standard and quasi-resonant photoluminescence experiments as a function of the electric field supported clear signatures of hole coupling in a quantum dot molecule.
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  • Colfuturo
• Forma/género: tesis
• Idioma: castellano
• Institución origen: Biblioteca Virtual del Banco de la República
• Encabezamiento de materia:
  • Self-assembled quantum dots; Quantum dot molecules; Molecular Beam Epitaxy growth; Quantum technology; Puntos cuánticos auto-ensamblados; Moléculas artificiales; Crecimiento molecular epitaxial
  • Tecnología; Tecnología / Ingeniería y operaciones afines; Tecnología / Ingeniería y operaciones afines / Física aplicada